| PART |
Description |
Maker |
| NES1823P-30 |
30 W L-S BAND PUSH-PULL POWER GaAs MES FET
|
NEC[NEC]
|
| NES2427P-60 |
60 W S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
|
| NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1%
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE650107700 |
L/S BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
|
| FLL200IB-1 FLL200IB-2 FLL200IB-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL107ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLU10XM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| NE9000XX NE9002XX |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
|
NEC Electronics
|
