PART |
Description |
Maker |
AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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R29771 R29683 |
Standard 4096 x 8 Bit PROM(标准096 x 8 PROM) Standard 2048 x 8 Bit PROM(标准048 x 8 PROM) 标准048 × 8位可编程(标准的2048 × 8位可编程
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Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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AS8FLC1M32BP-70/IT AS8FLC1M32BQ-100/XT AS8FLC1M32B |
1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66 1M X 32 FLASH 3V PROM, 100 ns, CQFP68 1M X 32 FLASH 3V PROM, 120 ns, CQFP68
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Micross Components
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S29CD032J0MFAM033 S29CD016J0MQFM130 S29CD016J0PQFM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
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Spansion, Inc. SPANSION LLC
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53S441 53S440 |
(53S440 / 53S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
63S440 |
(63S440 / 63S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
PA28F008SC-90 E28F008SC-150 PA28F008SC-170 |
1M X 8 FLASH 3.3V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44 1M X 8 FLASH 3.3V PROM, 150 ns, PDSO40 1M X 8 FLASH 3.3V PROM, 170 ns, PDSO44
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Intel, Corp. INTEL CORP
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K8D3216UTC-PI07T K8D3216UTC-TC070 K8D3216UBC-DC070 |
2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 2M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
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Electronic Theatre Controls, Inc. Samsung Semiconductor Co., Ltd.
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CY7C251 7C251 CY7C254 |
16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率转换可重复编程的PROM) 16K的8电源开关和可再编程胎膜早破6K的8功率转换和可重复编程的可编程 16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率转换可重复编程的 PROM) From old datasheet system 16K x 8 Power Switched andReprogrammable PROM
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Cypress Semiconductor Corp.
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HY27US08561A HY27US16561A HY27SS08561A HY27SS16561 |
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63
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Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
AT49F002N-90JC AT49F002NT-70JL AT49F002NT-90JL AT4 |
256K X 8 FLASH 5V PROM, 70 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 120 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 PLASTIC, MS-016AE, LCC-32 550NS,PDIP,IND TEMP,5.0V(FLASH) 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
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聚兴科技股份有限公司 Atmel, Corp. ATMEL CORP
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NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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