PART |
Description |
Maker |
GS74116U-15 |
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 15 ns, PBGA48
|
GSI Technology, Inc.
|
N04L63W2AB27I N04L63W2AB27IT N04L63W2AT27I N04L63W |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
|
ON Semiconductor
|
GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM 10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
GS76024B-15I GS76024B-10 GS76024B-10I GS76024B-12 |
6Mb56K x 24Bit)Asynchronous SRAM(6M位(256K x 24位)异步静态RAM) 256K x 24 6Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM 180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
GS840E18AB-190 GS840E18AT-190I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位)分位,写延迟LVTTL高速同步静态随机存储器56 × 18位)
|
Sony, Corp.
|
GS74104ATJ |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
GS74108AJ-8 GS74108ATP-10 GS74108ATP-10I GS74108AT |
512K x 8 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
CG6258AM |
4Mb (256K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM From old datasheet system
|
List of Unclassifed Manufacturers ETC[ETC]
|
N04M1618L1AT-85I N04M1618L1A N04M1618L1AB N04M1618 |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
http:// NANOAMP[NanoAmp Solutions, Inc.]
|