PART |
Description |
Maker |
BD535 BD537 BD536 BD533 4133 BD538 BD534 -BD536 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??) From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 2W; Custom Solutions Available; 1kVDC Complemetary Silicon Power Transistors(互补硅功率晶体管)
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STMICROELECTRONICS[STMicroelectronics] 意法半导
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MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA From old datasheet system COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
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MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
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PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4 Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4 Replacement with:PBY272R
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Diotec Semiconductor AG DIOTEC[Diotec Semiconductor] Diotec Elektronische
|
2N5655 2N5656 2N5657 |
Power 1A 350V NPN POWER TRANSISTORS NPN SILICON Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
BD237 ON0191 |
From old datasheet system POWER TRANSISTORS NPN SILICON Plastic Medium Power Silicon NPN Transistor CASE 77-09 TO-225AA TYPE
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
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http:// ONSEMI[ON Semiconductor]
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NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
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California Eastern Labs
|
2SB805 2SB806 2SB806-T1 2SB805-T2 2SB805-T1 2SB806 |
Low frequency power amplification Silicon transistor PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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NEC[NEC]
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NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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NTE Electronics, Inc. NTE[NTE Electronics]
|
MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
BUV20D BUV20 BUV60 BUV20-D |
Power 50A 125V NPN TO204 SWITCHMODE Series NPN Silicon Power Transistor SWITCHMODE Series NPN Silicon Power Transistor SITCHMODE Series NPN Silicon Power Transistor
|
ONSEMI[ON Semiconductor]
|
BUV21 BUV21_D ON0257 |
From old datasheet system 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS SITCHMODE Series NPN Silicon Power Transistor
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Motorola, Inc. ON Semiconductor
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