| PART |
Description |
Maker |
| UPD441000LF1-BA1-B10X UPD441000LF1-BA1-C12X UPD441 |
128K X 8 STANDARD SRAM, 100 ns, PBGA36
128K X 8 STANDARD SRAM, 120 ns, PBGA36
128K X 8 STANDARD SRAM, 150 ns, PBGA36
|
|
| CY62148CV33LL-70BVI CY62148CV25 CY62148CV25LL-55BA |
512K X 8 STANDARD SRAM, 55 ns, PBGA36
512K x 8 MoBL Static RAM 512K X 8 STANDARD SRAM, 70 ns, PBGA36
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc]
ISSI [Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| CY62138VNLL-70BAI |
256K x 8 Static RAM 256K X 8 STANDARD SRAM, 70 ns, PBGA36
|
Cypress Semiconductor, Corp.
|
| K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM
256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM（存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏，单片静态随机存储器（存取时间为35ns））
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation
White Electronic Designs, Corp.
|
| AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
| IDT7164S07 IDT7164LL25PG IDT7164LL25PGI IDT7164S20 |
8K X 8 STANDARD SRAM, 19 ns, PDSO28
8K X 8 STANDARD SRAM, 25 ns, PDIP28 0.600 INCH, PLASTIC, DIP-28
CMOS Static RAM 64K (8K x 8-Bit)
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
|
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| 71024S20TYI 71024S15TYI IDT71024S15TYI8 IDT71024S2 |
128K X 8 STANDARD SRAM, 20 ns, PDSO32 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PDSO32 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PDSO32 0.300 INCH, PLASTIC, SOJ-32
128K X 8 STANDARD SRAM, 20 ns, PDSO32 0.300 INCH, PLASTIC, SOJ-32
IC, 128KX8 SRAM 20NS 128K X 8 STANDARD SRAM, 20 ns, PDSO32
SMD-IC,MEM,SRAM,128KX8 25NS,.3W SOJ32 128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| MT5C6405 MT5C6405C-12_883C MT5C6405C-12_IT MT5C640 |
16K x 4 SRAM SRAM MEMORY ARRAY
16K X 4 STANDARD SRAM, CQCC28
16K X 4 STANDARD SRAM, 12 ns, CDIP28
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
|
