Part Number Hot Search : 
CM5008WW F1020 6048092 4CX1000A EDI8810H 100MA 2SJ18 1H222
Product Description
Full Text Search

MRF141G - RF FIELD-EFFECT POWER TRANSISTOR From old datasheet system

MRF141G_991946.PDF Datasheet

 
Part No. MRF141G
Description RF FIELD-EFFECT POWER TRANSISTOR
From old datasheet system

File Size 16.68K  /  1 Page  

Maker


Advanced Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF141G
Maker: MOTOROLA
Pack: 高频管
Stock: 162
Unit price for :
    50: $86.09
  100: $81.79
1000: $77.48

Email: oulindz@gmail.com

Contact us

Homepage http://www.advancedsemiconductor.com/
Download [ ]
[ MRF141G Datasheet PDF Downlaod from Datasheet.HK ]
[MRF141G Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF141G ]

[ Price & Availability of MRF141G by FindChips.com ]

 Full text search : RF FIELD-EFFECT POWER TRANSISTOR From old datasheet system


 Related Part Number
PART Description Maker
MTM12P10 MTP12P06 MTP12P10 POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
NDP6020P NDB6020P P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
IRFF110 IRFF111 IRFF112 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
General Electric Solid State
GE Solid State
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
General Electric Solid State
GE Solid State
PTF181301 PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
INFINEON[Infineon Technologies AG]
MTM15N20 Power Field Effect Transistor
New Jersey Semi-Conductor P...
MRF6522-70 MRF6522-70R306 MRF6522-70R3 RF Power Field Effect Transistor
http://
Freescale Semiconductor, Inc
MRF19085 MRF19085LR3 MRF19085LSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MTM15N05L MTM15N06L MTP15N05EL MTP15N06L MTP15N05L POWER FIELD EFFECT TRANSISTOR
Motorola, Inc.
MRF282 MRF282ZR1 MRF282SR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
 
 Related keyword From Full Text Search System
MRF141G microsemi MRF141G Marin MRF141G surface MRF141G buffer MRF141G board
MRF141G series MRF141G filter MRF141G speech voice MRF141G Chip MRF141G Battery MCU
 

 

Price & Availability of MRF141G

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.4088978767395