| PART |
Description |
Maker |
| MN102H75K |
Microcomputer - 16bit - General Purpose
From old datasheet system
QFP084-P-1818E(Pb Free)
|
Matsshita / Panasonic
|
| 2SB1732TL |
Genera purpose amplification(?2V, ?.5A)
|
Rohm
|
| 2SB1709 |
Genera purpose amplification(−12V −1.5A)
Genera purpose amplification(-12V, -1.5A)
|
ROHM[Rohm]
|
| M38067MC-453GP M38063M6-181GP M38067MC-204FP M3806 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
Single Chip 8-Bit CMOS Microcomputer
Single Chip 8-bit Microcomputer
3806 Series Microcontrollers: General Purpose, Large On-Chip Memory
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
| MN102H73K MN102H73G MN102H730F MN102H73 MN102H730 |
Microcomputer - 16bit - General Purpose
With main clock operated 58 ns (at 3.0 V to 3.6 V, 34 MHz)
With main clock operated 58 ns (at 3.0 V to 3.6 V 34 MHz)
|
PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| 3820GROUP E3820G M38207E8HP 3820 M38203M2LXXXFP M3 |
8-BIT SINGLE-CHIP MICROCOMPUTER
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
From old datasheet system
3819 Series Microcontrollers: On-Chip Segment FLD Drivers with A-D/D-A Converters
RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
| UPD750008 UPD750008CUA-XXX UPD750008CU-XXX UPD7500 |
75XL series 4B-pin microcomputer on-chip ROM (8Kx8) & RAM(512x4)
4-bit single-chip microcomputer
|
NEC
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
