| PART |
Description |
Maker |
| NX3008PBKW NX3008PBKW-15 |
30 V, 200 mA P-channel Trench MOSFET
|
NXP Semiconductors
|
| NX3020NAKV NX3020NAKV-15 |
30 V, 200 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| FDD6632 |
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз 4 A, 30 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Logic Level UltraFET Trench Power MOSFET 30V/ 9A/ 90m
N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mOhm
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC40 |
CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
|
Intersil, Corp.
Intersil Corporation
|
| PHX18NQ20T PHX18NQ20T-01 PHX18NQ20T127 |
From old datasheet system
8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220F, 3 PIN
N-channel enhancement mode field-effect transistor 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRF9510 FN2214 |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
| L608 FMD80-0045PS |
MOSFET Modules
Chopper with Trench Power MOSFET and Schottky Diode
|
IXYS[IXYS Corporation]
|
| IXFH120N20P |
PolarHT HiPerFET Power MOSFET 120 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| IXFH74N20P |
PolarHT HiPerFET Power MOSFET 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
IXYS, Corp.
|
|
