| PART |
Description |
Maker |
| K3P7V1000 K3P7V1000B-YC K3P7VU1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM 6400位（8Mx8 / 4Mx16）的CMOS掩膜ROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TC58FVM6T2A TC58FVM6B2A |
Flash - NOR
8Mx8 / 4Mx16 ; TSOP-I-48,TFBGA ;; Speed = 65ns/25ns Page ;; VCC = 2.7-3.6 ;; Read Icc Max (mA) = 55 ;; Standby Icc Max (uA) = 10 ;; Boot Block = Top ;;
|
TOSHIBA
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY51V65173HGJT |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
|
Citizen Finetech Miyota
|
| YG963S6R |
SILICON DIODE
IC AM29LV065 64 MBIT (8MX8) CMOS 3.0 VOLT UNIFORM SECTOR FLASH MEMORY
|
http://
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| AM29LV641D AM29LV640D AM29LV640DH101REE AM29LV640D |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control
Am29LV640D/Am29LV641D-64Megabit(4Mx16-Bit)CMOS3.0Volt-onlyUniformSectorFlashMemorywithVersatileIOControl
|
AMD
AMD[Advanced Micro Devices]
|
| TC58V64FT |
64mb CMOS EePROM: 8mx8
|
TOSHIBA
|
| KMM372V883BS KMM372V803BK KMM372V803BS KMM372V883B |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IS41LV16400 IS41LV16400-50T IS41LV16400-50TE IS41L |
4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
Integrated Silicon Solution, Inc
|
