| PART |
Description |
Maker |
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| TC544000 |
CMOS UV Erasable and Electrically Programmable ROM
|
Toshiba
|
| 5962-89839132X 5962-8983913RX PALCE16V8-25PC |
Flash Erasable Reprogrammable CMOS PAL
|
Cypress
|
| AT22LV10-30SC AT22LV10-30SI AT22LV10-30KM/883 AT22 |
Thick Film Chip Resistor - RMC 1/20 4.7K 1% R
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
|
Microsemi, Corp.
|
| PALC22V10D |
FLASG ERASABLE REPROGRAMMABLE CMOS PAL DEVICE
|
CYPRESS[Cypress Semiconductor]
|
| A5C180-70 CJ5C180-75 TN5C180-90 MG5C180-90 |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Unisonic Technologies Co., Ltd.
TE Connectivity, Ltd.
|
| EPM5128LI-2 EPM5128LC-2 EPM5128LC-1 EPM5128AJC-15 |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Powerex, Inc.
|
| HN27C64G |
8192-word x 8-bit UV Erasable and Programmable CMOS ROM
|
Hitachi Semiconductor
|
