| PART |
Description |
Maker |
| A67L73321 A67L73321E-10 A67L73321E-11 A67L73321E-1 |
256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM 256 × 16/1828K的X 32/36 LVTTL，流通过数据库管理员的SRAM
256K X 16/18/ 128K X 32/36 LVTTL/ Flow-through DBA SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| A67L93361 |
1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
|
AMIC Technology
|
| GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| KM416S1120DT-G/F7 KM416S1120DT-G/F6 KM416S1120DT-G |
1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
512K x 16bit x 2 Banks Synchronous DRAM LVTTL 12k × 16位2银行同步DRAM LVTTL
|
Samsung semiconductor
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| A67L83181E-11 A67L83181E-12 A67L83181E-10 |
256K X 16/18/ 128K X 32/36 LVTTL/ Flow-through DBA SRAM
|
AMIC Technology
|
| CY7C1383F-133BGC CY7C1383F-133BGI CY7C1383F-133BGX |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 512K X 36 CACHE SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 512K X 36 CACHE SRAM, 8.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71T75902 71T75702_DS_59004 IDT71T75902S80PF IDT |
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM
From old datasheet system
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs
|
IDT
|
| CY7C1357C-100BZC CY7C1357C-100BZI CY7C1357C-100BZX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL?/a> Architecture
|
Cypress Semiconductor
|
| IDT71V67702S85BG IDT71V67902S85BGI IDT71V67902S75B |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PQFP100
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| CY7C1383DV25-133AXC CY7C1381DV25-133AXC CY7C1381DV |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1383D-100AXC CY7C1383D-100AXI CY7C1383D-100BZC |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
