| PART |
Description |
Maker |
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| TC55V8512J-15 TC55V8512J-12 TC55V8512FT-15 TC55V85 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
From old datasheet system
(TC55V8512J/FT) 8-Bit CMOS SRAM
524,288-WORD BY 8-BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM62256BLFP10 HM62256BLFP8 HM62256BLFP-4SLT |
32768-word x 8-bit high speed CMOS static RAM, 45ns
IC-SM-256K CMOS SRAM
|
Hitachi Semiconductor
|
| UPD444008L UPD444008LLE-A10 UPD444008LLE-A12 UPD44 |
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT 4分位CMOS快速静态存储器12k - Word8
512K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
|
NEC, Corp.
Unisonic Technologies Co., Ltd.
NEC Corp.
|
| UPD444016LLE-A10 UPD444016LLE-A12 UPD444016LLE-A8 |
4M-bit(256K-word x 16-bit) Fast SRAM
|
NEC
|
| UPD4416004G5-A17-9JF UPD4416004G5-A15-9JF |
16M-bit(4M-word x 4-bit) Fast SRAM
|
NEC
|
| M5M5W816WG-85HI M5M5W816WG M5M5W816WG-55HI M5M5W81 |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
RENESAS[Renesas Electronics Corporation]
|
| UPD444004LE-10 UPD444004LE-12 UPD444004LE-8 |
4M-bit(1M-word x 4-bit) Fast SRAM
|
NEC
|
