| PART |
Description |
Maker |
| KM23C8100D KM23C8100DG |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| N08T1630C1BT N08T1630CXB N08T1630C1BT2 N08T1630C1B |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| BS616LV8018 BS616LV8018FIP70 BS616LV8018FC BS616LV |
From old datasheet system
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BS616LV8019 BS616LV8019FIP70 BS616LV8019EC BS616LV |
From old datasheet system
Asynchronous 8M(512Kx16) bits Static RAM
V35/M50 MALE PINS
V.35 HOODS
V.35 CONNECTOR SHELLS FEMALE
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
V35/M50 FEMALE PINS 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| EM680FU16A EM680FU16A-45LF EM680FU16A-55LF EM680FU |
Low Power, 512Kx16 SRAM
|
Emerging Memory & Logic Solutions Inc
|
| WE512K16-140G4CA WE512K16-140G4Q WE512K16-150G4C W |
512Kx16 CMOS EEPROM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| BS62LV2563TC BS62LV2563TI BS62LV2563 BS62LV2563DC |
5V ECL Differential Receiver; Package: SOIC; No of Pins: 8; Container: Rail
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM32K的8
Very Low Power/Voltage CMOS SRAM 32K X 8 bit 非常低功电压CMOS SRAM2K的8
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
