| PART |
Description |
Maker |
| ASI10654 TVV005 |
NPN Silicon RF Power Transistor(Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10615 HF250-50 |
NPN Silicon RF Power Transistor(Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10 |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET
600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
600V N-Channel B-FET / Substitute of SSU2N60A
600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
|
