PART |
Description |
Maker |
CM75TU-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM75DU-12F |
Trench Gate Design Dual IGBTMOD 75 Amperes/600 Volts
|
Powerex Power Semiconductors
|
CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM300DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 300 Amperes/600 Volts
|
Powerex Power Semiconductor... POWEREX[Powerex Power Semiconductors]
|
CM200DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 200 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM400DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor... Powerex Power Semiconductors
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
HDD60-48T512X HDD50-12D05P HDD50-12D05T HDD50-12D0 |
75W 960MHZ 26V NI780L 的DC - DC转换器的5060 3000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN DC - DC转换器的5060 1000000 SYSTEM GATE 1.2 VOLT FPGA DC - DC转换器的5060 DC-DC CONVERTER 50~60W DC - DC转换器的5060 XC2VP7-6FFG672C DC - DC转换器的5060 2000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 的DC - DC转换器的5060 DC-DC CONVERTER 50~60W 的DC - DC转换器的5060 6000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 4500 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN ; Collector Emitter Voltage, Vceo:30V; Transistor Polarity:NPN; Power Dissipation:3.5W; C-E Breakdown Voltage:30V; DC Current Gain Min (hfe):300; Collector Current:400mA; Package/Case:TO-39
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
HER207 HER207-T3 HER207-TB HER206 HER206-T3 HER206 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 2.0A HIGH EFFICIENCY RECTIFIER 2.0安培高速整流二极管
|
WTE[Won-Top Electronics] Won-Top Electronics Co., Ltd.
|
MIC915 MIC915BMM |
10000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10000 SYSTEM GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN Dual 135MHz Low-Power Op Amp
|
Micrel Semiconductor,Inc.
|
IRMD2336DJ |
3 PHASE GATE DRIVER IC REFERENCE DESIGN KIT
|
International Rectifier
|
FT0018 FT0018-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, Inc Solid States Devices, I...
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