| PART |
Description |
Maker |
| AS7C1026B AS7C1026B-20TIN AS7C1026B-10JC AS7C1026B |
High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5 V 64K X 16 CMOS SRAM 54K的16 CMOS SRAM
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
High Speed CMOS Logic Dual Positive-Edge-Triggered J-K Flip-Flops with Set and Reset 16-PDIP -55 to 125
High Speed CMOS Logic Triple 3-Input AND Gates 14-PDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge-Triggered J-K Flip-Flops with Set and Reset 16-SOIC -55 to 125
SRAM - 5V Fast Asynchronous
|
Analog Devices, Inc.
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| P4C187-20PC P4C187-20PI P4C187-20PM P4C187-20PMB P |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS
64K X 1 STANDARD SRAM, 35 ns, QCC28
64K X 1 STANDARD SRAM, 35 ns, CDIP22
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| CY62126V CY62126VLL-55BAC CY62126VLL-70BAI CY62126 |
64K X 16 STANDARD SRAM, 70 ns, PDSO44
64K X 16 STANDARD SRAM, 55 ns, PDSO44
64K X 16 STANDARD SRAM, 70 ns, PBGA48
64K X 16 STANDARD SRAM, 55 ns, PBGA48
From old datasheet system
64K x 16 Static RAM
|
CYPRESS SEMICONDUCTOR CORP
|
| K6R1016V1D K6R1016V1D-JI080 K6R1016V1D-UI080 |
64K X 16 STANDARD SRAM, 8 ns, PDSO44
IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
samsung
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| T35L6432A T35L6432A-5T T35L6432A-5Q |
64K x 32 SRAM
0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter
|
TM Technology, Inc.
Taiwan Memory Technology
|
| AS7C31026-20TI AS7C1026 AS7C1026-12 AS7C1026-12BC |
5V/3.3V 64K x 16 CMOS SRAM
5V / 3.3V 64KX16 CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
| DS38464-070 |
3.3V 64k x 40 NV SRAM SIMM 64K X 40 NON-VOLATILE SRAM MODULE, 70 ns, SMA72
|
Maxim Integrated Products, Inc.
|
