| PART |
Description |
Maker |
| W29EE512 W29EE512T-90B W29EE512P-12 W29EE512P-12B |
64K X 8 CMOS FLASH MEMORY
|
WINBOND[Winbond]
|
| W29C102Q-90B W29C102Q-70B W29C102P-90B W29C102P-70 |
64K 16 CMOS FLASH MEMORY
|
Winbond
|
| W29EE512 W29EE512P-12 W29EE512P-12B W29EE512P-70 W |
64K X 8 CMOS FLASH MEMORY
|
Winbond
|
| AT29LV1024 |
1 Megabit 64K x 16 3-volt Only CMOS Flash Memory
|
ATMEL Corporation
|
| AT29C1024-12TI AT29C1024-15TI AT29C1024-90TI AT29C |
1 Megabit 64K x 16 5-volt Only CMOS Flash Memory
|
ATMEL[ATMEL Corporation]
|
| AT29LV1024-15 AT29LV1024-15JC AT29LV1024-15JI AT29 |
1 Megabit 64K x 16 3-volt Only CMOS Flash Memory
|
ATMEL Corporation
|
| AT29C512-12 AT29C512-12JC AT29C512-12JI AT29C512-1 |
512K 64K x 8 5-volt Only CMOS Flash Memory
|
ATMEL Corporation
|
| W49F102 W49F102P40 W49F102P45 W49F102Q40 W49F102Q4 |
From old datasheet system
64K X 16 CMOS FLASH MEMORY
|
WINBOND[Winbond]
|
| 89C536 P89C536 P89C536NBAA P89C536NBBB P89C538NBAA |
CMOS single-chip 8-bit microcontrollers with FLASH program memory
80C51 8-bit microcontroller family 16K/64K/512 FLASH
|
NXP Semiconductors
|
| AT49F1024A AT49F1024A-45VL AT49F1024A-45VC |
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
1 - MEGABIT ( 64K X 16 ) 5 - VOLTS ONLY FLASH MEMORY
|
ATMEL[ATMEL Corporation]
|
| W27E520S-70 W27520 W27E520W-90 W27E520 W27E520S-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 3.05X1.51X1.05 W/1 BTN ALMOND
FLASH MEMORY
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
