| PART |
Description |
Maker |
| IS61C6416 IS61C6416-10K IS61C6416-10T IS61C6416-12 |
64K x 16 HIGH-SPEED CMOS STATIC RAM
IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
ETC[ETC]
ISSI[Integrated Silicon Solution, Inc]
|
| K6R1016V1D K6R1016V1D-JI080 K6R1016V1D-UI080 |
64K X 16 STANDARD SRAM, 8 ns, PDSO44
IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
samsung
|
| K6R1016C1D |
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). Data Sheet
|
Samsung Electronic
|
| IS61LV6416 |
IC,SRAM,64KX16,CMOS,BGA,48PIN,PLASTIC
|
issi
|
| K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JC |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX29F100T_B 29F100TB |
1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
From old datasheet system
|
Macronix 旺宏
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| MX23C1024 23C1024 MX23C1024PC-12 MX23C1024QC-20 MX |
1M-BIT [64K x 16] CMOS MASK ROM
From old datasheet system
1m-BIT [64KX16] CMOS MASK ROM
|
MCNIX[Macronix International]
Macronix 旺宏
|
| CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32
128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
131072-word x 8-bit High Speed CMOS Static RAM
131072-word x 8-bit High Speed CMOS Static RAM
|
Cypress Semiconductor, Corp.
SONY
|
| AS7C1026B AS7C1026B-20TIN AS7C1026B-10JC AS7C1026B |
High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5 V 64K X 16 CMOS SRAM 54K的16 CMOS SRAM
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
High Speed CMOS Logic Dual Positive-Edge-Triggered J-K Flip-Flops with Set and Reset 16-PDIP -55 to 125
High Speed CMOS Logic Triple 3-Input AND Gates 14-PDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge-Triggered J-K Flip-Flops with Set and Reset 16-SOIC -55 to 125
SRAM - 5V Fast Asynchronous
|
Analog Devices, Inc.
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| P4C116-12JM P4C116-10JM P4C116-10JMB P4C116-20L28M |
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, QCC28
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 超高K × 8静态CMOS五羊
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, QCC28
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, CDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, PDSO24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, CDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, PDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, PDFP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDSO24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, QCC32
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| AS7C164A |
8K X 8 BIT HIGH SPEED CMOS SRAM
|
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