| PART |
Description |
Maker |
| MGF130297 |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGF1402B |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| SPF2086 |
Low Noise PHEMT GaAs FET
|
Sirenza Microdevices
|
| CFB0301_06 CFB0301 CFB030106 |
High Dynamic Range Low Noise GaAs FET
|
MIMIX[Mimix Broadband]
|
| SPF-2086TK |
Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation
|
List of Unclassifed Manufacturers
ETC
SIRENZA[SIRENZA MICRODEVICES]
|
| MGF1908A |
TAPE CARRIER LOW NOISE GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NE76118-T2 NE76118-T1 NE76118 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE34018 NE34018-TI-64-A NE34018-A NE34018-TI-63-A |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
|
CEL[California Eastern Labs]
|
| PB-CFB0301 |
High Dynamic Range Low-Noise GaAs FET 高动态范围低噪声砷化镓场效应
|
Mimix Broadband, Inc.
|
| NE3520S03 NE3520S03-T1C NE3520S03-T1D |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
