| PART |
Description |
Maker |
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| MGF130297 |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| CFB0301_06 CFB0301 CFB030106 |
High Dynamic Range Low Noise GaAs FET
|
MIMIX[Mimix Broadband]
|
| NE76118-T2 NE76118-T1 NE76118 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE34018-TI-64-A NE34018-TI-63-A NE34018-A |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
|
California Eastern Laboratories
|
| NE3517S03-T1C NE3517S03-T1D |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|
Renesas Electronics Corporation
|
| NE3513M04-T2 NE3513M04-T2B |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| NE3521M04-T2B-A NE3521M04-T2-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| NE38018_00 NE38018 NE38018-TI-67 NE38018-TI-68 |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
|
NEC[NEC]
|
| NE3513M04-T2B-A |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
| NE3521M04-T2B-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
