| PART |
Description |
Maker |
| KLT-231444 |
1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-231412 |
1310nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-249414 |
1490nm InGaAsP strained MQW DFB LD for 1.25G TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-255412 |
1550nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-131452 |
1310nm InGaAsP strained MQW for FP-LD 2mm ball lens TO CAN
|
KODENSHI KOREA CORP.
|
| NDL7910P NDL7701P NDL7705P NDL7620P |
1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE
|
NEC
|
| NDL7553P NDL7565P1 NDL7103 NDL7113 NDL7153 NDL7163 |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
|
NEC[NEC]
|
| NDL7910P NX8501BG-CA NX8501BG-BA NX8501 NX8501CC N |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 510纳米光纤通信InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
http://
|
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5321 NX5321EK-AZ NX5321EH-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX8315XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
