| PART |
Description |
Maker |
| M38510/30009B2A M38510/30009BAA M38510/30009BAB M3 |
Single 8-input NAND Gate
Dual 4-input NAND Gate
Quad 2-input NAND Gate
Triple 3-input NAND Gate 3输入与非
Triple 3-input NAND Gate 输入与非
|
ITT, Corp.
Linear Technology, Corp.
Bel Fuse, Inc.
|
| IW4011B |
NAND gates provide the system designer with direct implementation of the NAND function
|
Estek Electronics Co. Ltd
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| HEC4023BT HEC4023BT112 |
Triple 3-input NAND gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, TRIPLE 3-INPUT NAND GATE, PDSO14
HEF4023B; Triple 3-input NAND gate
|
NXP Semiconductors N.V.
Philips
|
| 74F00 74F00SJX 74F00PC 74F00PCX 74F00SC 74F00SCX 7 |
Quad 2-Input NAND Gate
From old datasheet system
Quad 2-Input NAND Gate F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDIP14
Quad 2-Input NAND Gate F/FAST SERIES, QUAD 2-INPUT NAND GATE, PDSO14
Quad 2-Input NAND Gate 输入与非
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| 74HC20D HCT20 74HCT20 74HCT20N 74HC20N 74HC20 74HC |
Dual 4-input NAND gate HC/UH SERIES, DUAL 4-INPUT NAND GATE, PDSO14
74HC/HCT20; Dual 4-input NAND gate
Dual 4-input NAND gate 输入与非
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| HD74LS00P HD74LS00 HD74LS00FPEL HD74LS00RPEL |
LS SERIES, QUAD 2-INPUT NAND GATE, PDIP14
Quadruple 2-Input NAND Gates
|
Renesas Electronics Corporation
|
| U74HC00-P14-T U74HC00-D14-T U74HC00-S14-R |
QUADRUPLE 2-INPUT POSITIVE-NAND GATES HC/UH SERIES, QUAD 2-INPUT NAND GATE, PDSO14
QUADRUPLE 2-INPUT POSITIVE-NAND GATES HC/UH SERIES, QUAD 2-INPUT NAND GATE, DIP14
|
Unisonic Technologies Co., Ltd.
|
| TH58512FT |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
| TH58512FTI |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
