PART |
Description |
Maker |
IRF7303 |
Generation V Technology
|
Kersemi Electronic Co., Ltd...
|
SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
IRF7501PBF IRF7501TRPBF IRF7501PBF-15 |
Generation V Technology Ulrtra Low On-Resistance
|
International Rectifier
|
IRF7304PBF IRF7304TRPBF |
Generation V Technology HEXFET Power MOSFET
|
International Rectifier
|
IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|