| PART |
Description |
Maker |
| PTB20134 |
30 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
| PTB20053 |
60 Watts, 86000 MHz Cellular Radio RF Power Transistor
60 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTFA043002E |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 鈥?860 MHz
|
Infineon Technologies AG
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PTB20188 |
4 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor
|
ERICSSON[Ericsson]
|
| PTF10020 |
125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson
|
| PTB20162 |
40 Watts, 470-900 MHz RF Power Transistor
|
ERICSSON[Ericsson]
|
| PTVA043502FC |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ?860 MHz
|
Infineon Technologies A...
|
| 1011LD110B |
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
Microsemi Corporation
|
| 0910-300M |
Bipolar/LDMOS Transistor
300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
