| PART |
Description |
Maker |
| ISL2110 ISL2110ABZ ISL2110AR4Z ISL2111 ISL2111ABZ |
100V, 3A/4A Peak, High Frequency Half-Bridge Drivers
|
Intersil Corporation
|
| HIP2101IR-T HIP2101 HIP2101EIB HIP2101EIB-T HIP210 |
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
100V/2A Peak High-Frequency Half Bridge Driver with TTL Logic Inputs; Temperature Range: -40°C to 85°C; Package: 8-EPSOIC T&R 2 A HALF BRDG BASED MOSFET DRIVER, PDSO8
20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 2 A HALF BRDG BASED MOSFET DRIVER, QCC16
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HD-0125M3-GH HD-0155M3-IH HD-0195M3-DH HD-0195M3-D |
Stick Coupler
3 dB 90° Card Couplers
3 dB 90∑ Card Couplers
3 dB 90 Card Couplers
SCR-600VRM 10A
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:100V; Package/Case:TO-202; Current Rating:4A; Mounting Type:Through Hole
3 dB 90Card Couplers 3分贝90Σ卡耦合
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:100V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA 3分贝90Σ卡耦合
3 dB 90??Card Couplers
3 dB 90?Card Couplers
|
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
HIROSE[Hirose Electric]
|
| HIP4081A HIP4081AIB HIP4081AIP |
30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 80V/2.5A峰值，高频全桥FET驱动
80V/2.5A Peak/ High Frequency Full Bridge FET Driver
80V/2.5A Peak, High Frequency Full Bridge FET Driver
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| PK3 PK15 |
Pulstors Resistors for high voltage peak pulsing energy control , high frequency non-inductive
|
Willow Technologies Ltd
|
| PK2 PK5 PK3 PK10 PK15 |
Pulstors Resistors for high voltage peak pulsing energy control , high frequency non-inductive 高压脉冲能量控制，高频无感电阻峰Pulstors
|
Willow Technologies Limited
Willow Technologies, Ltd.
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| EFXLDM-TTL-300J EFXLDM-TTL-24J EFXLDM-TTL-24T EFXL |
Low Power RTC with Battery Backed SRAM and Event Detection; Temperature Range: -40°C to 85°C; Package: 10-MSOP T&R
I2C® Real Time Clock/Calendar, Low Power RTC with Battery Backed SRAM; Temperature Range: -40°C to 85°C; Package: 8-SOIC
Low Power RTC with Battery Backed SRAM; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
Low Power RTC with Battery Backed SRAM; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
Low Power RTC with 8 Bytes of Battery Backed SRAM and Separate FOUT; Temperature Range: -40°C to 85°C; Package: 10-MSOP T&R
I2C® Real Time Clock/Calendar, Low Power RTC with Battery Backed SRAM; Temperature Range: -40°C to 85°C; Package: 8-MSOP
Dual Channel Central Office ADSL2 Line Driver; Temperature Range: -40°C to 85°C; Package: 28-HTSSOP T&R
Real Time Clock/Calendar with EEPROM; Temperature Range: -40°C to 85°C; Package: 8-SOIC
xDSL Differential Line Driver; Temperature Range: -40°C to 85°C; Package: 16-QFN T&R
Real Time Clock/Calendar with EEPROM; Temperature Range: -40°C to 85°C; Package: 8-TSSOP T&R
Real Time Clock/Calendar with I2C Bus™ and EEPROM; Temperature Range: -40°C to 85°C; Package: 14-TSSOP
Real Time Clock/Calendar with I2C Bus™ and EEPROM; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
100V, 3A/4A Peak, High Frequency Half-Bridge Drivers; Temperature Range: Full-Range Ind; Package: 12-DFN
High Voltage Input Precision, Low Noise FGA™ Voltage References; Temperature Range: Full-Range Ind; Package: 8-SOIC T&R
Dual Channel Central Office ADSL2 Line Driver; Temperature Range: -40°C to 85°C; Package: 24-QFN T&R
Precision, Low Noise FGA™ Voltage References; Temperature Range: Full-Range Ind; Package: 6-SOT-23 T&R
100V, 3A/4A Peak, High Frequency Half-Bridge Drivers; Temperature Range: Full-Range Ind; Package: 8-SOIC
Precision 0.600V Low Voltage FGA™ References; Temperature Range: Power Supply; Package: 3-SOT-23 T&R
100V, 2A Peak, High Frequency Half-Bridge Drivers; Temperature Range: -40°C to 85°C; Package: 9-DFN
xDSL Differential Line Driver; Temperature Range: -40°C to 85°C; Package: 10-HMSOP T&R
Delay Line 延迟
|
L-com, Inc.
|
| 1N191 |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA)
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
BKC International Electronics
Microsemi
|
| IPA80R460CE |
High peak current capability
|
Infineon Technologies A...
|
| IPA80R1K4CE |
High peak current capability
|
Infineon Technologies A...
|
