| PART |
Description |
Maker |
| HY57V161610ET-10 HY57V161610ET-15 HY57V161610ET-55 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor Inc.
|
| HY57V161610DTC-6I |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor
|
| A43L0616AV-55 A43L0616AV-7 A43L0616AV-7U A43L0616A |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
http://
AMIC Technology Corporation
|
| A43L1632V-6 |
512K X 32 Bit X 4 Banks Synchronous DRAM
|
AMIC Technology Corporation
|
| IC42S16101-6T IC42S16101-6TI IC42S16101-7TG IC42S1 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆）内存
|
Rohm Co., Ltd.
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| A43E06321G-95UF A43E06321 A43E06321G-75F A43E06321 |
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
|
AMICC[AMIC Technology]
|
| K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
|
| M32L32321SA-5Q M32L32321SA-6F M32L32321SA-6Q M32L3 |
From old datasheet system
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
ETC
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
CONNECTOR ACCESSORY
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
