| PART |
Description |
Maker |
| ISL59442 ISL59442IB ISL59442IB-T13 ISL59442IB-T7 I |
1GHz, 4 x 1 Multiplexing Amplifier
|
http://
Intersil Corporation
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| 310-025103-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024107-021 024107-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025105-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| EL2460 EL2260CN EL2260CS EL2460CS EL2460CN EL2260 |
1GHz, 4x1 Multiplexing Amplifier; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Dual/Quad 130MHz Current Feedback Amplifiers
Op Amp, Dual 130MHz, Current Feedback, 75?Cable Driver, Dual or Single Supply (33V)
Op Amp, Quad 130MHz, Current Feedback, 75Cable Driver, Dual or Single Supply (33V)
|
INTERSIL[Intersil Corporation]
|
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| MDM-7000 MDM-7002 MDM-7004 MDM-7008 MDM-7016 |
Multiplexing Systems
|
Opticomm Corporation
|
