| PART |
Description |
Maker |
| 2SA141712 EN2006D EN2006 |
Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SA2202 2SA2202-TD-E ENA0583A |
Bipolar Transistor -100V, -2A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| NSS30201MR6T1G |
30V, 3A, Low VCE(sat) NPN Transistor(30V, 3A, 低VCE(sat) NPN晶体 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
30 V, 3 A, Low VCE(sat) NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| NTE325 |
Silicon NPN RF Power Transistor 50W @ 30MHz
|
NTE[NTE Electronics]
|
| MRF448 |
The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
|
M/A-COM Technology Solutions, Inc.
|
| MRF429 |
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| NSS1C200LT1G |
100V 2A Low Vce(sat) PNP SOT-23 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
|
ON Semiconductor
|
| 2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| 2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| CMLM0405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
SMD Module NPN Low VCE(SAT) & Low VF Schottky Diode
|
CENTRAL[Central Semiconductor Corp]
|
| DSS9110Y DSS9110Y-7 DSS9110Y-15 |
100V LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
|
| MJD31CQ MJD31CQ-13 MJD31CQ-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
|
Diodes Incorporated
|
