| PART |
Description |
Maker |
| HY62UF16403ALLM HY62UF16403ALLM-I HY62UF16403ASLM |
256Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62SF16404D HY62SF16404D-DF HY62SF16404D-DFI HY62 |
256Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| HY62UF08401C-SSI HY62UF08401C-DSI |
High Speed, Super Low Power and 4Mbit Full CMOS SRAM 高速，超低功耗和4Mbit全CMOS SRAM
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I |
512K X 16 STANDARD SRAM, 100 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
| HY62UF16804B HY62UF16804B-DFC HY62UF16804B-DFI |
512Kx16bit full CMOS SRAM
|
Hynix Semiconductor
|
| TC55V020FT TC55V020TR |
(TC55V020FT/TR) 8-Bit FULL CMOS SRAM
|
Toshiba
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62LF16806B-I HY62LF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits
|
HYNIX
|
| HY62SF16406E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
