| PART |
Description |
Maker |
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| 829A 836A ZV832BV2TA 829B 830A 830B 831A 831B 832A |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON 25V HYPERABRUPT VARACTOR DIODES
|
ZETEX[Zetex Semiconductors]
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| SMV1770-079LF |
Hyperabrupt Junction Tuning Varactors S BAND, 23.6 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
| KV1401 KV1801 KV1501 KV1501-17 KV1601 |
VARACTOR DIODES HF/VHF Super Hyperabrupt Junction TM
VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
http://
MICROSEMI CORP-LOWELL
|
| D1027UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应150W-28V-175MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
Seme LAB
|
| D1002UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应40W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1017UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D1007UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| SMV1233-011LF SMV1235-011LF |
Hyperabrupt Tuning Varactors S BAND, 3.3 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Hyperabrupt Tuning Varactors S BAND, 11.5 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
| DKV6533C |
SILICON HYPERABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
|
