| PART |
Description |
Maker |
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 ECN3067SLV ECN3067SLR |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| HI1-565AJD-5 HI1-565AKD-5 HI1-565ASD_883 HI1-565AS |
From old datasheet system
High Speed Monolithic D/A Converter with Reference
High Speed, Monolithic D/A Converter with Reference
CIRCUIT BREAKER
High Speed/ Monolithic D/A Converter with Reference
64 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
|
INTERSIL[Intersil Corporation]
|
| TPD4144AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| LT3650-8.2 |
(LT3650-8.2 / -8.4) High Voltage 2 Amp Monolithic Li-Ion Battery Charger
|
Linear Technology Corporation
|
| IXBH15N160 |
(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
