| PART |
Description |
Maker |
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| LS301PDIP |
MONOLITHIC DUAL NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
|
Micross Components
|
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3064 |
High Voltage Monolithic IC
|
Renesas Technology
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| 2EX103K1 |
High Voltage Capacitors Monolithic Ceramic Type
|
Semtech
|
| LT3587 LT3587EUD-PBF LT3587EUD-TRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LS302 LS301 LS303 LS301-3 |
HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
|
Linear Integrated Syste...
LINEAR[Linear Integrated Systems]
Linear Systems
|
| NCP1050 NCP1050PZZZ NCP1050STZZZT3 NCP1051 NCP1051 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ONSEMI[ON Semiconductor]
|
