| PART |
Description |
Maker |
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
| W3EG7264S335AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL
|
White Electronic Design...
|
| W3DG7267V7D2 W3DG7267V75D2 |
512MB - 2x32Mx72, SDRAM UNBUFFERED
|
White Electronic Design...
|
| HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
| HYS64D64020GBDL-8-B HYS64D64020GBDL HYS64D64020GBD |
DDR SDRAM Modules - 512Mb (64Mx64) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank, FBGA based
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HY5DU121622ALT-J |
DDR SDRAM - 512Mb
|
Hynix Semiconductor
|
| HY5DU121622DTP HY5DU121622DLTP |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
| HY5DU12162 HY5DU121622BTP-X HY5DU12422B HY5DU12422 |
512Mb DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| NT5DS128M4CG |
512Mb DDR SDRAM
|
Nanya Techology
|
| K4H511638B-TC/LB3 |
DDR Sdram 512Mb B-die
|
Samsung Semiconductor
|
