| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS62C1024-35Q IS62C1024-35QI IS62C1024 16_62C1024 |
70ns; 5V; 128K x 8 high-speed CMOS static RAM
Micro LED; LED Color:Red Orange; Luminous Intensity:80ucd; Viewing Angle:140 ; Forward Voltage:2.2V; Color:Red/Orange; Package/Case:1210; Reel Quantity:3000; Wavelength:630nm RoHS Compliant: Yes 128K的8高速CMOS静态RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM
|
Advanced Interconnections, Corp.
SIEMENS AG
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
Integrated Circuit Solu...
|
| W24L010A W24L010A-10 W24L010A-12 W24L010A-15 W24L0 |
From old datasheet system
Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| W24010A |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM）的
|
Winbond Electronics, Corp.
|
| IS61C1024AL-12KI IS61C1024AL-12TLI IS61C1024AL-12K |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作）
128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IS61C12816NBSP IS61C12816-15T IS61C12816-12T IS61C |
128K x 16 HIGH-SPEED CMOS STATIC RAM 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM 128K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| LP62S1024BM-55LLT LP62S1024BM-70LLT LP62S1024B-T L |
55ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM
128K X 8 BIT LOW VOLTAGE CMOS SRAM
|
AMICC[AMIC Technology]
|
| LY611024JL-12LL LY611024JL-12LLE LY611024JL-12LLET |
128K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY61L12816AML-10IT LY61L12816AML-10T |
128K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY61L1288RL-15E LY61L1288RL-10I LY61L1288RL-12 LY6 |
128K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| T14L1024N T14L1024N-10C T14L1024N-10H T14L1024N-10 |
128K X 8 HIGH SPEED CMOS STATIC RAM
|
TMT[Taiwan Memory Technology]
|
