| PART |
Description |
Maker |
| IPP50CN10NG IPP50CN10NG10 IPI50CN10NG IPB50CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC022N03 BSC022N03S |
OptiMOS2 Power-Transistor
|
Infineon Technologies A...
INFINEON [Infineon Technologies AG]
INFINEON[Infineon Technologies AG]
|
| IPP06CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPD06N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| IPB06N03LB |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| BSO064N03S |
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 6.4mOhm, 16A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IPBH6N03LAG |
OptiMOS2 Power-Transistor
OptiMOS㈢2 Power-Transistor
|
Infineon Technologies AG
|
| BSR202N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSL302SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSC052N03S |
OptiMOS2 Power-Transistor
|
Infineon Technologies A...
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
