| PART |
Description |
Maker |
| BSC032N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPP04N03LBG IPP04N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC059N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPP10N03LBG IPP10N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPF09N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| IPF12N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
| BSO350N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSR302N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
| BSC052N03S |
OptiMOS2 Power-Transistor
|
Infineon Technologies A...
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
