PART |
Description |
Maker |
IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET(减振钢板基本\u003d- 100V的,的Rds(on)\u003d 0.48ohm,身份证\u003d- 6.6A P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性(P沟道的HEXFET功率马鞍山场效应管) P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF International Rectifier, Corp.
|
SPP04N60S5 |
Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
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2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK29 |
Low voltage 4V drive power MOSFET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system MOS Field Effect Transistor
|
NEC[NEC] NEC Corp.
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APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
2SK2480 2SK2480-AZ |
3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC Corp. NEC[NEC]
|
IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??) 4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
|
APT5014SLL APT5014BLL APT5014BLL_04 APT5014BLL04 |
35 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD POWER MOS 7 MOSFET
|
ADPOW[Advanced Power Technology]
|
APT20M45BVFR |
56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement POWER MOS V 200V 56A 0.045 Ohm
|
MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
|
APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF I |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??) -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A) HEXFET? Power MOSFET
|
IRF[International Rectifier] http://
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2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET MOS FIELD EFFECT TRANSISTOR MOS场效应管 Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
|
NEC, Corp. NEC Corp.
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