| PART |
Description |
Maker |
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| UPD65021 UPD65100 UPD65000 UPD65004 UPD65011 UPD65 |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS UPD65000（的CMOS - 3）系微米的CMOS门阵
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS
|
NEC, Corp.
NEC[NEC]
http://
|
| N25Q128A11ESE40G |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| N25Q128A11ESE40X N25Q128A11ESF40X N25Q128A11E1240X |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| D5AC312 |
1-Micron CMOS 12-Macrocell PLD
|
Intel
|
| STD80 |
0.5 Micron STD80 Standard Cell Library Introduction
|
Samsung Electronic
|
| CB-C8 |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC Corp.
|
| M25PX64-VME6G M25PX64-VMF |
Micron M25PX64 Serial Flash Embedded Memory
|
Micron Technology
|
| JS28F00AP33BFA PC28F512P33EFA PC28F512P33TFA PC28F |
Micron Parallel NOR Flash Embedded Memory (P33-65nm)
|
Micron Technology
|
| 251748-007 |
Intel Celeron Processor on 0.13 Micron Process in the 478-Pin Package
|
Intel Corporation
|
| N25Q256A13E1240E N25Q256A13EF840E |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A
|
Micron Technology
|
