| PART |
Description |
Maker |
| MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| KIA78R000F/PI KIA78R050F/PI KIA78R015F/PI KIA78R01 |
BIPOLAR LINEAR INTEGRATED CIRCUIT
5 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, SFM4
SEMICONDUCTOR
SEMICONDUCTOR TECHNICAL DATA
|
KEC(Korea Electronics)
|
| AN80T05 |
Panasonic Semiconductor Singapore A Division of Panasonic Semiconductor Asia Pte Ltd
|
Panasonic Semiconductor
|
| PD-1500-F PD-8500 |
GaAs PIN PD MODULES GaAs PIN PHOTODIODE WITH RECEPTACLE GaAs PIN型帕金森模块砷化镓PIN光电二极管与插座
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TG2211FT |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
