PART |
Description |
Maker |
MCM72BA64SG66 MCM72BA32 MCM72BA32SG50 MCM72BA32SG6 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
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M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
MPC2105BSG66 MPC2105ASG66 MPC2105A MPC2106ASG66 MP |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc MOTOROLA[Motorola Inc]
|
M28F420 |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器)
|
意法半导
|
M29F400BB45N1E M29F400BB45N1F M29F400BB45N3E M29F4 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29F400BB45N1 M29F400BB45N1T M29F400BB45N3 M29F400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Dual Precision Low-Power Single Supply Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽,启动座单电源闪 Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 High-Speed, Low-Power, Precision Single Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪 Excalibur High-Speed Low-Power Precision Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽,启动座单电源闪
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
LPC1774FBD208 LPC1776FBD208 LPC1778FBD208 LPC1777F |
128kB flash, 40kB SRAM, USB, LQFP208 package 256kB flash, 80kB SRAM, Ethernet, USB, LQFP208 package 512kB flash, 96kB SRAM, Ethernet, USB, LQFP208 package 512kB flash, 96kB SRAM, USB, LQFP208 package 512kB flash, 96kB SRAM, Ethernet, USB, LCD, LQFP144 package 512kB flash, 96kB SRAM, Ethernet, USB, LCD, LQFP208 package 512kB flash, 96kB SRAM, Ethernet, USB, LCD, TFBGA208 package 512kB flash, 96kB SRAM, Ethernet, USB, LQFP144 package 512kB flash, 96kB SRAM, Ethernet, USB, TFBGA208 package
|
NXP Semiconductors
|
LH28F400BVE-TL85 LHF40V01 |
4MB (512KB x 8/256KB x 16) SmartVoltage Flash Memory(4M512Kx 8/256K位x 16)闪速存储器) Photoelectric Sensor; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Time Range:1.5 sec. to 15 sec.; Timing Function:On-Delay and Off-Delay 4分快闪记忆体
|
Sharp Corporation Sharp, Corp.
|
M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器 4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器 Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器 From old datasheet system 4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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