| PART |
Description |
Maker |
| GS8321ZV18 GS8321ZV32 GS8321ZV36E-250 GS8321ZV36E- |
36Mb NBT SRAMs
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
ETC
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS8320ZV18 |
36Mb NBT SRAMs
|
GSI Technology
|
| GS832118E-150I GS832118E-200 GS832118E GS832118E-1 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| MT54W4MH9B-4 MT54W4MH9B-5 MT54W4MH9B-6 MT54W4MH9B- |
36Mb QDR?II SRAM 2-WORD BURST
|
Micron Technology
http://
|
| GS8342S08E-167 GS8342S08GE-167 GS8342S08GE-167I GS |
36Mb Burst of 2 DDR SigmaSIO-II SRAM
|
GSI[GSI Technology]
|
| GS832272C-250I GS832218 GS832218B GS832218B-133 GS |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI Technology
ETC[ETC]
|
| GS8322V72C-200I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI Technology
|
| GS8322Z18B-133IT GS8322Z18B-133 GS8322Z18B-133I GS |
36Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI Technology
|
| GS832136GE-133I |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
