PART |
Description |
Maker |
GS8160Z18CGT-250I GS8160Z18CGT-333 GS8160Z18CT GS8 |
18Mb Burst SRAMs 18Mb Pipelined and Flow Through Synchronous NBT SRAM
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GSI[GSI Technology]
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GS816018CT-250I GS816018CGT-250I GS816018CT-333 GS |
18Mb Burst SRAMs 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8161ZV18B GS8161ZV32B GS8161ZV36B |
18Mb Burst SRAMs
|
GSI Technology
|
GS8162Z18B GS8162Z36B |
18Mb Burst SRAMs
|
GSI Technology
|
GS8160ZV18B |
18Mb Burst SRAMs
|
GSI Technology
|
GS8161V18CD-333 GS8161V18CD-333I GS8161V18CD-300 G |
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS816273CC-250IV GS816273CGC-250V GS816273CC-250V |
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS816272CC-333 GS816272CC-150 GS816272CC-150I GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8160F18BGT-7.5I GS8160F32BT-5.5I GS8160F32BT-6.5 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 5.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
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GSI Technology, Inc.
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IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
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IDT http:// Integrated Device Technology, Inc.
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