PART |
Description |
Maker |
N01L63W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
GS78108B-10 |
10ns 1M x 8 8Mb asynchronous SRAM
|
GSI Technology
|
N01L6183AB27I N01L6183AB27IT N01L6183AT27I N01L618 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
N01L6183A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
N01L1618N1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 8 bit
|
ON Semiconductor
|
N01L163WN1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit
|
NanoAmp Solutions
|
N01M083WL1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N01L163WC2AT2-55I N01L163WC2A N01L163WC2AB N01L163 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 1MB的超低功耗CMOS SRAM的异 From old datasheet system
|
Electronic Theatre Controls, Inc. http:// NANOAMP[NanoAmp Solutions, Inc.] etc
|
IS61WV6416EEBLL |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
|
Integrated Silicon Solution, Inc
|
MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,单循环取消选择,同步脉冲静态存储器) 64K的18.3V的I / O的流水线,SCD的SyncBurst的SRAM兆,3.3V的输输出,流水线式,单循环取消选择,同步脉冲静态存储器
|
Micron Technology, Inc.
|
CY7C464A CY7C462A CY7C460A 7C46XA CY7C462-15JC |
IC-SM 16KX9 CMOS FIFO From old datasheet system Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs
|
Cypress
|