| PART |
Description |
Maker |
| 2SK3760 |
MOSFET 2SK/2SJ Series
|
TOSHIBA
|
| 2SK3567 |
MOSFET 2SK/2SJ Series
|
TOSHIBA
|
| 2SK3762 |
MOSFET 2SK/2SJ Series
|
TOSHIBA
|
| 2SK3798 |
MOSFET 2SK/2SJ Series
|
TOSHIBA
|
| 2SK3565 |
MOSFET 2SK/2SJ Series
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (PIE-MOS4)
|
Toshiba Semiconductor
|
| 2SK3530-01MR 2SK3530 |
Fuji Power MOSFET SuperFAP-G series Target Specification
Fuji Power MOSFET SuperFAP-G series Target Specification 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| F-CBS-F1 F-CBS-F3 F-CBS-F5 F-CBS-F2 |
Heat sink is prepared in TUNS100 series, CBS series, DHS200 series and DHS250 series.
|
List of Unclassifed Man...
|
| IRF7807VD1 |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| APTM120A20DG |
Phase leg with Series diodes MOSFET Power Module 50 A, 1200 V, 0.24 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SIHF30N60E-GE3 SIHF30N60E13 |
E Series Power MOSFET
|
Vishay Siliconix
|
| SIHB24N65E-GE3 |
E Series Power MOSFET
|
Vishay Siliconix
http://
|
