| PART |
Description |
Maker |
| ENA0412A |
Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
| BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
| BDX14S |
Bipolar PNP Device in a Hermetically sealed TO66
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-213AA
|
Seme LAB
|
| ZT90 BFT35 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-5
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
|
SEME-LAB[Seme LAB]
|
| 2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd.
ROHM[Rohm]
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| 2SA1289 2SC3253 2SC3253S 2SC3253R 2SA1289R |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220AB
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-220AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
60V/5A High-Speed Switching Applications
|
ETC
SANYO[Sanyo Semicon Device]
|
| IRFI064 IRFI064-15 |
Simple Drive Requirements
TRANSISTOR N-CHANNEL(Vdss=60V/ Rds(on)=0.017ohm/ Id=45A*)
TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
60V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| IRF9Z14STRL IRF9Z14L IRF9Z14STRR |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-262
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6.7A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 6.7AI（四）|63AB
|
Sumida, Corp.
|
| TIP2955G |
Bipolar Power T0218 PNP 15A 60V; Package: SOT-93 (T0-218) 4 LEAD; No of Pins: 3; Container: Rail; Qty per Container: 30 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|
| 2N3804 2N4985 2N1650 2N2632 |
SILICON UNIDIRECTIONAL SWITCH|8.2V V(BO) MAX|300UA I(S)|TO-18
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 3A I(C) | STR-10
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|个STR - 10
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 50MA I(C) | TO-71 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 50mA的一（c）|1
|
Mitsubishi Electric, Corp.
Powerex, Inc.
|
