PART |
Description |
Maker |
HC05 MC68HC705X32 MC68HC05X32 MC68HC05X16 XC68HC05 |
HIGH-DENSITY COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (HCMOS) MICROCONTROLLER UNIT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
68HC705SR3 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Units
|
Motorola, Inc.
|
MC68HC705X32 MC68HC05X32 MC68HC05X16 |
High-density complementary metal oxide semiconductor HCMOS) microcontroller unit
|
FREESCALE[Freescale Semiconductor, Inc]
|
MC68HC705L2B MC68HC705L2CB MC68HC705L2K MC68HC05L2 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Motorola, Inc
|
ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD CRYSTAL 32.768KHZ 12.5PF SMD 3.3V In-System Programmable SuperFAST?/a> High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3V In-System Programmable SuperFAST High Density PLD CRYSTAL 12.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD 3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
BFC236821105 BFC236829564 6811334 BFC236859562 |
CAP,MET POLYESTER (MYLAR),1UF,100VDC,10% -TOL,10% TOL CAP,MET POLYESTER (MYLAR),560NF,100VDC,5% -TOL,5% TOL CAP,MET POLYESTER (MYLAR),330NF,63VDC,10% -TOL,10% TOL CAP,MET POLYESTER (MYLAR),5.6NF,400VDC,5% -TOL,5% TOL
|
Vishay BCcomponents
|
ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD CRYSTAL 24.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI20 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFAST?/a> High Density PLD In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128 In-System Programmable SuperFAST??High Density PLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
|
1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40 High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44 High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44 High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40 High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
1032-60LG_883 1032-60LJ 1032-60LJI 1032-60LT 1032- |
High-Density Programmable Logic In-System Programmable High Density PLD
|
LATTICE[Lattice Semiconductor]
|