PART |
Description |
Maker |
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008 |
CMOS SRAM 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
|
Samsung semiconductor
|
HY62SF1640 HY62SF16403A HY62SF16403A-I HY62SF16403 |
256Kx16bit full CMOS SRAM High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
UT6164BJC-10 UT6164BJC-8 UT6164BJC-12 UT6164BJC-15 |
32K X 8 BIT HIGH SPEED CMOS SRAM 32K的8位高速CMOS SRAM
|
UTRON Technology Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
MX29F004TTC-12 MX29F004TTC-12G MX29F004TTC-55 MX29 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
MX29F004T MX29F004TPC-12 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|
MX29F400TM 29F4000 MX29F400TMC-90 MX29F400TTC-70 M |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
KM23C4100DET KM23C4100DT |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] http://
|
K6T4008C1B-DB70 |
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG
|
MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
MX23L4003 23L4003 |
4M-BIT [512Kx8] LOW VOLTAGE OPERATION CMOS MASK ROM From old datasheet system
|
Macronix 旺宏
|