| PART |
Description |
Maker |
| JQC-3FC NT73BS5DC3V NT73AS5DC3V NT73CS6DC9VF NT73 |
Superminiature, High power. / Low coil power consumption.
|
DBLECTRO[DB Lectro Inc]
|
| E1215M-1W E0305M-1W E0512M-1W E0505M-1W E0515M-1W |
DUAL OUTPUT SUPERMINIATURE SIP PACKAGE
|
MORNSUN Science& Technology Ltd.
|
| B-XLM |
1W, FIXED INPUT, ISOLATED UNREGULATED DUAL/SINGLE OUTPUT,SUPERMINIATURE SIP PACKAGE
|
Microdc power Technolog...
|
| ISR2800DESRH ISR2800DHURH ISR2800DHDRH ISR2805DHDR |
2-OUTPUT 2.5 W DC-DC REG PWR SUPPLY MODULE
Adj, Radiation hardened high-power, high efficiency DC-DC power converter
5V, Radiation hardened high-power, high efficiency DC-DC power converter
|
MS KENNEDY CORP
M.S. Kennedy Corp.
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| FS10SM-16 FS10SM-16A |
Power MOSFETs: FS Series, High Voltage, 800V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| MJW16212 ON2060 |
Power 10A 650V NPN
POWER TRANSISTOR
From old datasheet system
High and Very High Resolution Monitors
|
ON Semiconductor
http://
|
| 2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-current gain Power Transistor(60V/ 3A)
High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
| 2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| MT5375-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
