PART |
Description |
Maker |
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
MGFS45V2735 |
2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC45B3436B |
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET From old datasheet system
|
Mitsubishi
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC] ETC
|
NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管 0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp. NEC[NEC]
|
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HWL34YRA |
L-Band GaAs Power FET
|
Hexawave, Inc
|