| PART |
Description |
Maker |
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| TLP813 |
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TLP141G |
Programmable Controllers AC-Output Module Soild State Relay
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
|
Toshiba Semiconductor
STMicroelectronics
|
| TLN11707 TLN117F |
INFRARED LED GAAS INFRAED EMITTER 红外发光二极管公认审INFRAED发射
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| MIE-134G2 134G2 |
Infrared Emitting Diodes (IRED)
GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TLOE157AP TLYE157AP TLRE157AP TLSE157P |
TOSHIBA T-1 3/4 InGaAIP Ultra Bright LED
Toshiba TLxE157 Series LEDs
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
